? semiconductor components industries, llc, 2003 december, 2003 ? rev. 1 1007 publication order number: MMBTA06WT1/d npn silicon moisture sensitivity level: 1 esd rating: human body model ? 4 kv esd rating: machine model ? 400 v features ? pb?free package may be available. the g?suffix denotes a pb?free lead finish maximum ratings rating symbol value unit collector?emitter voltage v ceo 80 vdc collector?base voltage v cbo 80 vdc emitter?base voltage v ebo 4.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board t a = 25 c p d 150 mw thermal resistance, junction to ambient r ja 833 c/w junction and storage t emperature t j , t stg ?55 to +150 c device package shipping ? ordering information MMBTA06WT1 sc?70 sc?70 case 419 style 3 3000/t ape & reel 2 3 1 marking diagram gm d gm = specific device code d = date code collector 3 1 base 2 emitter http://onsemi.com MMBTA06WT1g sc?70 (pb?free) 3000/t ape & reel ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
MMBTA06WT1 http://onsemi.com 1008 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 1.0 madc, i b = 0) v (br)ceo 80 ? vdc emitter ? base breakdown voltage (i e = 100 adc, i c = 0) v (br)ebo 4.0 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ces ? 0.1 adc collector cutoff current (v cb = 80 vdc, i e = 0) i cbo ? 0.1 adc on characteristics dc current gain (i c = 10 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 100 100 ? ? ? collector ? emitter saturation v oltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? 0.25 vdc base ? emitter on voltage (i c = 100 madc, v ce = 1.0 vdc) v be(on) ? 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (note 2) (i c = 10 ma, v ce = 2.0 v, f = 100 mhz) f t 100 ? mhz 1. pulse test: pulse width 300 s, duty cycle 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
MMBTA06WT1 http://onsemi.com 1009 figure 2. current ? gain ? bandwidth product figure 3. capacitance figure 4. switching time figure 5. active ? region safe operating area figure 6. dc current gain figure 7. ? on ? voltages
MMBTA06WT1 http://onsemi.com 1010 figure 8. collector saturation region figure 9. base ? emitter temperature coefficient
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